FESB8DT-E3/45
Description: Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-263AB
Manufacturer:Vishay
Specifications
Average Rectified Current:
8 A
Case/Package:
TO-263-3
Element Configuration:
Common Cathode
Forward Current:
8 A
Max Operating Temperature:
150 °C
Max Repetitive Reverse Voltage (Vrrm):
200 V
Max Reverse Voltage (DC):
200 V
Max Surge Current:
125 A
Min Operating Temperature:
-55 °C
Mount:
Surface Mount
Number of Pins:
3
Peak Non-Repetitive Surge Current:
125 A
Peak Reverse Current:
10 µA
Radiation Hardening:
No
Recovery Time:
35 ns
Reverse Recovery Time:
35 ns
Reverse Voltage:
200 V
RoHS:
Compliant
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