JAN1N5552US
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER
Manufacturer:Microchip
Quantity In Stock: 315
Specifications
Element Configuration:
Single
Forward Current:
5 A
Lifecycle Status:
Production (Last Updated: 5 months ago)
Max Operating Temperature:
175 °C
Max Repetitive Reverse Voltage (Vrrm):
600 V
Min Operating Temperature:
-65 °C
Mount:
Surface Mount
Packaging:
Bulk
Peak Non-Repetitive Surge Current:
100 A
Peak Reverse Current:
1 µA
Radiation Hardening:
No
Reverse Recovery Time:
2 µs
RoHS:
Non-Compliant
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