OPB810W55Z
Specifications
Collector Emitter Breakdown Voltage:
30 V
Collector Emitter Voltage (VCEO):
30 V
Forward Current:
50 mA
Forward Voltage:
1.7 V
Input Current:
20 mA
Max Breakdown Voltage:
30 V
Max Collector Current:
30 mA
Max Operating Temperature:
80 °C
Min Operating Temperature:
-40 °C
Mount:
Chassis Mount, Screw
Number of Elements:
1
Output Configuration:
Phototransistor
Output Voltage:
30 V
Packaging:
Bulk
Power Dissipation:
100 mW
Reverse Breakdown Voltage:
2 V
RoHS:
Compliant
Sensing Distance:
9.525 mm
Touchscreen:
Infrared (IR)
Wavelength:
890 nm
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